t4 - lds -0075, rev . 3 ( 5 /2 4 /13 ) ?201 3 microsemi corporation page 1 of 8 1n2970 b ? 1n3015b and 1n3993 a ? 1n 3998 a available on commercial versions 10 watt zener diodes qualified per mil - prf - 19500/124 qualified levels : jan, jantx, and jantxv description the jedec registered 1n2970b through 1n3015b and 1n3993a through 1n3998a series are 10w zener diodes with voltage regulation values between 3.9 and 200v. they are available in jan, jantx, and jantxv military qualification grades on most voltage values. do - 213aa ( do - 4 ) package imp ortant: for the latest information, visit our website http://www.microsemi.com . features ? internal solder bond construction . ? hermetically sealed (welded). ? zener regulation v oltage s from 3.9 v to 200 v. ? standar d and reverse polarit ies are available. ? consult factory for surface mount equivalents . ? jan, jantx, and jantxv qualifications are available per mil - prf - 19500/124. ? rohs compliant devices available by adding ?e3? suffix (commercial grade only). applicatio ns / benefits ? regulates voltage over a broad range of current and temperature. ? standard voltage tolerances are +/ - 5% . ? nonsensitive to esd per mil - std -750 m ethod 1020 . ? inherently radiation hard as described in microsemi micronote 050 . maximum ratings msc ? law rence 6 lake street, lawrence, ma 01841 tel: 1 -800- 446- 1158 (978) 620 - 2600 fax: (978) 689 - 0803 msc ? ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction temperature t j - 65 to +175 o c storage temperature t stg - 6 5 to + 200 o c thermal resistance junction - to - case r ? j c 12 o c /w steady - state power dissipation @ t c = +55 oc (1) p d 10 w forward voltage @ 2.0 a v f 1.5 v solder pad temperature @ 10 s t sp 260 oc notes: 1. derate at 0.083 w/ oc above +55 oc .
t4 - lds -0075, rev . 3 ( 5 /2 4 /13 ) ?201 3 microsemi corporation page 2 of 8 1n2970 b ? 1n3015b and 1n3993 a ? 1n 3998 a mechanical and packaging ? case: industry s tandard do - 4, (do - 203aa), 7/16? h ex, stud with 10 - 32 threads, welded, hermetically sealed metal and glass . ? terminals: tin -l ead p lated or rohs compliant matte -t in plating ( commercial grade only ) on n i ckel . ? polarity : 1n2970b ? 1n3015 b : std. polarity is anode to stud . reverse polarity (cathode to stud) indicated by suffix ?r b?. 1n3993 a ? 1n3998a : std. polarity is cathode to stud. reverse polarity (anode to stud) indicated by suffix ?r a?. ? mounting hardware: consult factory for optional insulator, bushing solder t erminal, washers, and nut . ? weight: approximately 7.5 grams. ? see package dimensions on last page. part nomenclature 1n2970 ? 1n3015 series only : jan 1n2970 r b e3 reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial jedec type number (s ee e lectrical characteristic s t able ) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c omplia nt 5% tolerance (consult factory for other tolerances) polarity blank = standard (anode to stud) r = reverse ( cathode to stud ) 1n3993 ? 1n3998 series only : jan 1n3993 r a e3 reliability level jan = jan level jantx = jantx level jantxv = jan txv level blank = commercial jedec type number (s ee electrical characteristics t able ) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant 5% tolerance (consul t factory for other tolerances) polarity blank = standard (cathode to stud) r = reverse (anode to stud)
t4 - lds -0075, rev . 3 ( 5 /2 4 /13 ) ?201 3 microsemi corporation page 3 of 8 1n2970 b ? 1n3015b and 1n3993 a ? 1n 3998 a symbols & definitions symbol definition i zt regulator current: the dc regulator current (i z ), at a specified test point (i zt ), near breakdown k nee (i zk ). i r reverse current: the maximum reverse (leakage) current that will flow at the specified voltage and temperature. i zm maximum regulator (zener) current: the maximum rated dc current for the specified power rating. v f maximum forward volta ge: the maximum forward voltage the device will exhibit at a specified current. v r reverse voltage: the reverse voltage dc value, no alternating component. v z zener voltage: the z ener voltage the device will exhibit at a specified current (i z ) in its breakdown region. z zt or z zk dynamic impedance: the small signal impedance of the diode when biased to operate in its breakdown region at a specified rms current modulation (typically 10% of i zt or i zk ) and superimposed on i zt or i zk respectively.
t4 - lds -0075, rev . 3 ( 5 /2 4 /13 ) ?201 3 microsemi corporation page 4 of 8 1n2970 b ? 1n3015b and 1n3993 a ? 1n 3998 a electrical characteristics jedec type no. (note 1) nominal zener voltage v z @ i zt (note 2) volts zener test current ( i zt ) ma max. dynamic impedance (note 3) max dc zener current ( i z m ) @ 2 5 o c stud temp. (note 4) ma temp. coeff. vz %/ o c max ** reverse current i r @ v r polarity z zt @ i zt o hms z zk @ 1ma (i zk ) o hms a volts ?1n3993a ?1n3994a ?1n3995a ?1n3996a ?1n3997a ?1n3998a 3.9 4.3 4.7 5.1 5.6 6.2 640 580 530 490 445 405 2.0 1.5 1.2 1.1 1.0 1.1 400 400 5 5 0 550 600 7 0 0 2440 2200 2000 1840 1680 1520 - 0 .0 60 - 0 .0 50 + 0 .025 + 0 .030 + 0 .040 + 0 .045 100 100 50 10 10 10 0.5 0.5 1.0 1.0 1.0 2.0 std. polarity cathode to stud ?1n2970b ?1n2971b ?1n2972b ?1n2973b ?1n2974b ?1n2975b 6.8 7.5 8.2 9.1 10 11 370 335 305 275 250 230 1.2 1.3 1.5 2.0 3 3 500 250 250 250 250 250 1500 1350 1180 1100 980 890 +0.057 +0.067 +0.070 +0.075 +0.081 +0.085 150 100 50 25 25 10 5.2 5.7 6.2 6.9 7.6 8.4 std. polarity anode to stud ?1n2976b ?1n2977b 1n2978b ?1n2979b ?1n2980b 1n2981b 12 13 14 15 16 17 210 190 180 170 155 1 45 3 3 3 3 4 4 250 250 250 250 250 250 820 750 600 640 605 500 +0.079 +0.080 +0 .070 +0.082 +0.083 +0 .075 10 10 10 10 10 10 9.1 9.9 10.5 11.4 12.2 13.0 ?1n2982b 1n2983b ?1n2984b ?1n2985b ?1n2986b 1n2987b 18 19 20 22 24 25 140 130 125 115 105 100 4 4 4 5 5 6 250 250 250 250 250 250 525 440 480 435 400 310 +0.085 +0 .075 +0.086 +0.087 +0.088 +0 .080 10 10 10 10 10 10 13.7 14.0 15.2 16.7 18.2 18.2 ?1n2988b ?1n2989b ?1n2990b ?1n2991b ?1n2992b ?1n2993b 27 30 33 36 39 43 95 85 75 70 65 60 7 8 9 10 11 12 250 300 300 300 300 400 340 320 300 260 240 220 +0.090 +0.091 +0.092 +0.093 +0.094 +0.095 10 10 10 10 10 10 20.6 22.8 25.1 27.4 29.7 32.7 1n2994b ?1n2995b 1n2996b ?1n2997b 1n2998b ?1n2999b ?1n3000b 45 47 50 51 52 56 62 55 55 50 50 50 45 40 13 14 15 15 15 16 17 4 00 400 500 500 500 500 600 185 200 165 185 160 170 150 +0 .090 +0.095 +0 .090 +0.096 +0 .090 +0.096 +0.097 10 10 10 10 10 10 10 33.0 35.8 36.0 38.8 39.0 42.6 47.1 ?1n3001b ?1n3002b ?1n3003b ?1n3004b ?1n3005b 1n3006b ?1n3007b 68 75 82 91 100 105 110 37 33 30 28 25 25 23 18 22 25 35 40 45 55 600 600 700 800 900 1000 1100 137 125 115 97 91 75 82 +0.097 +0.098 +0.098 +0.099 +0.110 +0 .095 +0.110 10 10 10 10 10 10 10 51.7 56.0 62.2 69.2 76.0 76.0 83.6 ?1n3008b ?1n3009b 1n3010b ?1n3011b ?1n3012b 1n3013b ?1n3014b ?1n3015b 120 130 140 150 160 175 180 200 20 19 18 17 16 14 14 12 75 100 125 175 200 250 260 300 1200 1300 1400 1500 1600 1750 1850 2000 77 71 58 62 58 46 52 46 +0.110 +0.110 +0 .095 +0.110 +0.110 +0 .095 +0.110 +0.110 10 10 10 10 10 10 10 10 91.2 98.8 100.0 114.0 121.6 135.0 136.8 152.0 * jedec registered data. ** not jedec data. ? have jan , jantx and jantxv q ualifications to mil - prf - 19500/124. see further notes on following page.
t4 - lds -0075, rev . 3 ( 5 /2 4 /13 ) ?201 3 microsemi corporation page 5 of 8 1n2970 b ? 1n3015b and 1n3993 a ? 1n 3998 a notes: 1. 1n3993 a - 1n3998a and 1n2970 b ? 1n3015 b series are +/ - 5% tolerance. if a tighter tolerance is required, consult factory. 2. the electrical characteristics are measured after allowing the device to stabilize for 90 seconds with 30 o c b ase temperature. 3. the z ener impedance (z zt ) is derived from th e 60 hz ac voltage, which results when an ac current having an rms value equal to 10% of the dc z ener current (i zt or i zk ) is superimposed on i zt or i zk . when making z ener impedance measurements at the i zk test point, it may be necessary to insert a 60 hz band pass filter between the diode and voltmeter to avoid errors resulting from low level noise signals. a curve showing the variation of z ener impedance vs. z ener current for three representative types is shown in f igures 2 an d 3 . also see microsemi micronote 202 . 4. derate i z linearly to 0.0 ma at +175c, for t c > +55c . these values of i zm may be exceeded in the case of individual diodes. the values shown are calculated for the worst case that is a unit of +/ - 5% tolerance at the high voltage end of its tolerance range. allowance has also been made for the rise in z ener voltage above v zt , which results from z ene r impedance and the increase in junction temperature as power dissipation approaches 10 watts.
t4 - lds -0075, rev . 3 ( 5 /2 4 /13 ) ?201 3 microsemi corporation page 6 of 8 1n2970 b ? 1n3015b and 1n3993 a ? 1n 3998 a graphs case ( stud ) temperature oc figure 1 power derating curve i zt zener current (ma) figure 2 typical zener impednace vs. zener current for types shown pd rated power dissipation - watts z zt , zener impedance (ohms)
t4 - lds -0075, rev . 3 ( 5 /2 4 /13 ) ?201 3 microsemi corporation page 7 of 8 1n2970 b ? 1n3015b and 1n3993 a ? 1n 3998 a graphs (continued) i zt zener current (ma) figure 3 typical zener impedance vs zener current for types shown zener impedance (ohms) z t
t4 - lds -0075, rev . 3 ( 5 /2 4 /13 ) ?201 3 microsemi corporation page 8 of 8 1n2970 b ? 1n3015b and 1n3993 a ? 1n 3998 a package dimensions notes: 1. dimensions are in inches. millimeters are given for information only. 2. see ? m echanical and p ackaging ? for the polarity of the terminals. 3. threads shall be 10 ? 32 unf ? 2a in accordance with fed ? std ? h28. maximum pitch diameter (sd) of plated threads is 0 .1697 inch (4.31 mm). 4. maximum torque allowed on the 10 ? 32 unf ? 2b nut when assem bled on the thread is 15 inch - pounds. 5. the angular orientation and peripheral configuration of terminal 1 is undefined, however, the major surfaces over dimension c and c1 shall be flat. 6. dimension cd can not exceed dimension hf. 7. a chamfer or undercut on on e or both ends of the hex portion is optional; minimum base diameter at the seating plane is 0 .403 inch (10.24 mm). 8. length of incomplete or undercut threads ud. 9. in accordance with asme y14.5m, diameters are equivalent to x symbology. dimensi ons ltr inches millimeters notes min max min max c - 0 .250 - 6.35 5 c 1 0 .012 0 .065 0.30 1.65 5 cd 0 .255 0 .424 6.48 10.77 6 ch 0 .300 0 .405 7.62 10.29 hf 0 .424 0 .437 10.77 11.1 6 ht 1 0 .075 0 .175 1.91 4.45 7 ht 2 0 .060 0 .175 1.52 4.45 7 oah 0 .60 0 0 .800 15.24 20.32 sd - - - - 2 sl 0 .422 0 .453 10.72 11.51 su - 0 .078 - 1.98 ud 0 .163 0 .189 4.14 4.80 8 t 0 .060 0 .095 1.52 2.41
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